Research

Materials development

We develop band-engineered semiconductor systems by molecular beam epitaxy (MBE) in silicon-germanium, arsenides and antimonides. Currently, we are particularly interested in

• gate-tunable 2D electron or hole systems
• core/shell semiconductor nanowires and quantum wires
• isotopically purified heterostructures (silicon and germanium isotopes)
• hybrid oxide/semiconductor or metal/semiconductor MBE structures 

Model systems

We use our heterostructures to then play with the physics of

• spin qubits in silicon (electron spin) and germanium (hole spin)
  1. all-eletrical control  of spin qubits
  2. electrical g-factor switching in a silicon-germanium environment
• spin-orbit effects and their electric control in semiconductors (arsenides, antimonides)
• nanophotonics and lasing in quantum wires (GaAs/AlGaAs)
• proximity effects at interfaces between semiconductors and superconductors

See also our publications and alumni for recent examples of our work.